| 原産地: | 中国(本土) | 銘柄: | Osn/oem | モデル番号: | Osn- 16s2005b- bms | Min.線幅: | 110 | 基材: | 回路パネル | 表面の仕上げ: | 242 | Min.行送り: | L110*w50*t15mm | 電圧: | 51.8v | 最大放電電流: | 10a | 最大充電電流: | 20a | サイズ: | L110*w50*t15mm | 重量: | 100g |
包装
| 包装: | 標準的なパッキングpachage |
Product Description
Model: OSN-16S2005B-BMS(PCM-L16S20-486) | |||
No. | Test item | Criterion | |
1 | Voltage | Charging voltage | DC:57.6V 3.6V/Cell |
|
| Balance voltage for single cell | 3.60+0.025V |
2 | Current | Balance current for single cell | 72+5mA |
|
| Current consumption for single cell | ≤50μA |
|
| Maximal continuous Charging current | 5A |
|
| Maximal continuous Discharging current | 20A |
3 | Over charge Protection | Over charge detection voltage | 3.90+0.025V |
|
| Over charge detection delay time | 0.5—2S |
|
| Over charge release voltage | 3.80+0.05V |
4 | Over discharge protection | Over discharge detection voltage | 2.00+0.062V |
|
| Over discharge detection delay time | 10-200mS |
|
| Over discharge release voltage | 2.0+0.062V |
5 | Over current protection | Over current detection voltage | 0.62V |
|
| Over current detection current | 80+10A |
|
| Detection delay time | 5ms—20mS |
|
| Release condition | Cut load, Automatic Recovery |
6 | Short protection | Detection condition | Exterior short circuit |
|
| Detection delay time | 200-500us |
|
| Release condition | Cut load, Automatic Recovery |
7 | Resistance | Protection circuitry (MOSFET) | ≤30mΩ |
8 | Temperature | Operating Temperature Range | -40~+85°C |
|
| Storage Temperature Range | -40~+125°C |
9 | Size |
| L110*W50*T15mm |
FAQ
